FET, MOSFET 어레이

제조업체 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지

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결과
사진 제조사 부품 번호 재고 상태 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지
MSCSM120DUM31TBL1NG

MSCSM120DUM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

3,193 -
RFQ
MSCSM120DUM31TBL1NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31TBL1NG

MSCSM120AM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

2,052 -
RFQ
MSCSM120AM31TBL1NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM50T3AG

MSCSM120HM50T3AG

MOSFET 4N-CH 1200V 55A

Microchip Technology

6,679 -
RFQ
MSCSM120HM50T3AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 2mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M31C1AG

MSCSM120VR1M31C1AG

MOSFET 2N-CH 1200V 89A

Microchip Technology

9,240 -
RFQ
MSCSM120VR1M31C1AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM31CTBL1NG

MSCSM120DUM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

8,165 -
RFQ
MSCSM120DUM31CTBL1NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31CTBL1NG

MSCSM120AM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

3,104 -
RFQ
MSCSM120AM31CTBL1NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM16T1AG

MSCSM120AM16T1AG

MOSFET 2N-CH 1200V 173A

Microchip Technology

5,028 -
RFQ
MSCSM120AM16T1AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DHM31CTBL2NG

MSCSM120DHM31CTBL2NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

5,827 -
RFQ
MSCSM120DHM31CTBL2NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Asymmetrical - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MCB40P1200LB-TUB

MCB40P1200LB-TUB

MOSFET 2N-CH 1200V 58A SMPD

IXYS

4,053 -
RFQ
MCB40P1200LB-TUB

데이터시트

- 9-SMD Power Module Tube Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 58A - - - - - - - - Surface Mount SMPD
MSCSM120HM31T3AG

MSCSM120HM31T3AG

MOSFET 4N-CH 1200V 89A

Microchip Technology

8,784 -
RFQ
MSCSM120HM31T3AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM31TBL2NG

MSCSM120HM31TBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

5,760 -
RFQ
MSCSM120HM31TBL2NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DDUM31TBL2NG

MSCSM120DDUM31TBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

8,448 -
RFQ
MSCSM120DDUM31TBL2NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
DF419MR20W3M1HFB11BPSA1

DF419MR20W3M1HFB11BPSA1

MOSFET 4N-CH 2000V 50A AG-EASY3B

Infineon Technologies

1 -
RFQ
DF419MR20W3M1HFB11BPSA1

데이터시트

EasyPACK™ Module Tray Active MOSFET (Metal Oxide) 4 N-Channel - 2000V (2kV) 50A (Tj) 26.5mOhm @ 60A, 18V 5.15V @ 34mA 234nC @ 18V 7240pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY3B
MSCSM120VR1M16CT3AG

MSCSM120VR1M16CT3AG

MOSFET 2N-CH 1200V 173A

Microchip Technology

6,962 -
RFQ
MSCSM120VR1M16CT3AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM31CTBL2NG

MSCSM120HM31CTBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

7,468 -
RFQ
MSCSM120HM31CTBL2NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DDUM31CTBL2NG

MSCSM120DDUM31CTBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

6,453 -
RFQ
MSCSM120DDUM31CTBL2NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TAM31T3AG

MSCSM120TAM31T3AG

MOSFET 6N-CH 1200V 89A

Microchip Technology

7,863 -
RFQ
MSCSM120TAM31T3AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM11T3AG

MSCSM120AM11T3AG

MOSFET 2N-CH 1200V 254A

Microchip Technology

9,957 -
RFQ
MSCSM120AM11T3AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.067kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
BSM180D12P2C101

BSM180D12P2C101

MOSFET 2N-CH 1200V 204A MODULE

Rohm Semiconductor

1 -
RFQ
BSM180D12P2C101

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 204A (Tc) - 4V @ 35.2mA - 23000pF @ 10V 1130W -40°C ~ 150°C (TJ) - - - Module
MSCSM120HM16T3AG

MSCSM120HM16T3AG

MOSFET 4N-CH 1200V 173A

Microchip Technology

8,197 -
RFQ
MSCSM120HM16T3AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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