24시간 이용 가능:
0755-82798135FET, MOSFET 어레이
| 사진 | 제조사 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 구성 | FET 기능 | 드레인-소스 전압(Vdss) | 전류 - 연속 드레인(Id) @ 25°C | Rds 켜짐(최대) @ Id, Vgs | Vgs(th) (최대) @ Id | 게이트 충전(Qg) (최대) @ Vgs | 입력 커패시턴스(Ciss) (최대) @ Vds | 전력 - 최대 | 작동 온도 | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSCSM70TAM19CT3AGMOSFET 6N-CH 700V 124A SP3F |
1 | - |
|
데이터시트 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP3F |
|
MSCSM70DUM017AGMOSFET 2N-CH 700V 1021A |
5,247 | - |
|
- |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 700V | 1021A (Tc) | 2.1mOhm @ 360A, 20V | 2.4V @ 36mA | 1935nC @ 20V | 40500pF @ 700V | 2750W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
BSM600D12P4G103MOSFET 2N-CH 1200V 567A MODULE |
2,691 | - |
|
데이터시트 |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 567A (Tc) | - | 4.8V @ 291.2mA | - | 59000pF @ 10V | 1.78kW (Tc) | 175°C (TJ) | - | - | Chassis Mount | Module |
|
MSCSM170AM058CT6LIAGMOSFET 2N-CH 1700V 353A |
3,712 | - |
|
데이터시트 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1700V (1.7kV) | 353A (Tc) | 7.5mOhm @ 180A, 20V | 3.3V @ 15mA | 1068nC @ 20V | 19800pF @ 1000V | 1.642kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
CAB650M17HM3MOSFET 2N-CH 1700V 916A MODULE |
1 | - |
|
데이터시트 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1700V (1.7kV) | 916A (Tc) | 1.86mOhm @ 650A, 15V | 3.6V @ 305mA | 2988nC @ 15V | 97300pF @ 1200V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
|
FF2600UXTR33T2M1BPSA1MOSFET 2N-CH 3300V AG-XHP2K33 |
8,488 | - |
|
데이터시트 |
CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 3300V (3.3kV) | 720A (Tc) | 3.1mOhm @ 750A, 15V | 5.55V @ 675mA | 3750nC @ 15V | 152000pF @ 1.8kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-XHP2K33 |
|
SSM6N68NU,LFMOSFET 2N-CH 30V 4A 6DFN |
16 | - |
|
데이터시트 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 30V | 4A (Ta) | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | 2W (Ta) | 150°C | - | - | Surface Mount | 6-µDFN (2x2) |
|
DMN2016LFG-7MOSFET 2N-CH 20V 5.2A 8DFN |
5,306 | - |
|
데이터시트 |
- | 8-PowerUDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 5.2A | 18mOhm @ 6A, 4.5V | 1.1V @ 250µA | 16nC @ 4.5V | 1472pF @ 10V | 770mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | U-DFN3030-8 |
|
ZXMN3A06DN8TAMOSFET 2N-CH 30V 4.9A 8SO |
13 | - |
|
데이터시트 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 35mOhm @ 9A, 10V | 1V @ 250µA (Min) | 17.5nC @ 10V | 796pF @ 25V | 1.8W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
BUK9V13-40HXMOSFET 2N-CH 40V 42A LFPAK56D |
6 | - |
|
데이터시트 |
TrenchMOS™ | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | Logic Level Gate | 40V | 42A (Ta) | 13.6mOhm @ 10A, 10V | 2.2V @ 1mA | 19.4nC @ 10V | 1160pF @ 25V | 46W (Ta) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK56D |
|
STS1DNC45MOSFET 2N-CH 450V 0.4A 8SOIC |
7,067 | - |
|
데이터시트 |
SuperMESH™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 450V | 400mA | 4.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 10nC @ 10V | 160pF @ 25V | 1.6W | 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD110900SALMOSFET 2N-CH 10.6V 8SOIC |
9,418 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD1116PALMOSFET 2N-CH 10.6V 8PDIP |
7,888 | - |
|
데이터시트 |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD1117PALMOSFET 2P-CH 10.6V 8PDIP |
9,185 | - |
|
데이터시트 |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 1800Ohm @ 5V | 1.2V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD1102SALMOSFET 2P-CH 10.6V 8SOIC |
12 | - |
|
데이터시트 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD210800SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
19 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD1102PALMOSFET 2P-CH 10.6V 8PDIP |
22 | - |
|
데이터시트 |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD110800ASCLMOSFET 4N-CH 10.6V 16SOIC |
23 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD1101ASALMOSFET 2N-CH 10.6V 8SOIC |
4,264 | - |
|
데이터시트 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD110800APCLMOSFET 4N-CH 10.6V 16PDIP |
4 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
