FET, MOSFET 어레이

제조업체 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지

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사진 제조사 부품 번호 재고 상태 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지
MSCSM70VR1M03CT6AG

MSCSM70VR1M03CT6AG

MOSFET 2N-CH 700V 585A

Microchip Technology

5,261 -
RFQ
MSCSM70VR1M03CT6AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 585A (Tc) 3.8mOhm @ 200A, 20V 2.4V @ 20mA 1075nC @ 20V 22500pF @ 700V 1.625kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042D3AG

MSCSM120AM042D3AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

8,526 -
RFQ
MSCSM120AM042D3AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042T6LIAG

MSCSM120AM042T6LIAG

MOSFET 2N-CH 1200V 495A

Microchip Technology

8,847 -
RFQ
MSCSM120AM042T6LIAG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70HM038AG

MSCSM70HM038AG

MOSFET 4N-CH 700V 464A

Microchip Technology

8,657 -
RFQ
MSCSM70HM038AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1.277kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M062CT6AG

MSCSM120VR1M062CT6AG

MOSFET 2N-CH 1200V 420A

Microchip Technology

6,745 -
RFQ
MSCSM120VR1M062CT6AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 420A (Tc) 6.2mOhm @ 200A, 20V 2.8V @ 15mA 1160nC @ 20V 15100pF @ 1000V 1.753kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM063AG

MSCSM120HM063AG

MOSFET 4N-CH 1200V 333A

Microchip Technology

5,753 -
RFQ
MSCSM120HM063AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 12mA 928nC @ 20V 12000pF @ 1000V 873W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M16CTPAG

MSCSM120VR1M16CTPAG

MOSFET 6N-CH 1200V 171A

Microchip Technology

6,532 -
RFQ
MSCSM120VR1M16CTPAG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
WAS350M12BM3

WAS350M12BM3

MOSFET 2N-CH 1200V 417A

Wolfspeed, Inc.

5,400 -
RFQ
WAS350M12BM3

데이터시트

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 417A (Tc) 5.2mOhm @ 350A, 15V 3.6V @ 85mA 844nC @ 15V 25700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
MSCSM120TAM11TPAG

MSCSM120TAM11TPAG

MOSFET 6N-CH 1200V 251A

Microchip Technology

5,406 -
RFQ
MSCSM120TAM11TPAG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027T6AG

MSCSM120AM027T6AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

8,830 -
RFQ
MSCSM120AM027T6AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
WAS530M12BM3

WAS530M12BM3

MOSFET 2N-CH 1200V 630A

Wolfspeed, Inc.

9,932 -
RFQ
WAS530M12BM3

데이터시트

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 630A (Tc) 3.47mOhm @ 530A, 15V 3.6V @ 127mA 1362nC @ 15V 38900pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
MSCSM120AM027D3AG

MSCSM120AM027D3AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

5,173 -
RFQ
MSCSM120AM027D3AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM03T6LIAG

MSCSM120AM03T6LIAG

MOSFET 2N-CH 1200V 805A

Microchip Technology

2,067 -
RFQ
MSCSM120AM03T6LIAG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 30mA 2320nC @ 20V 30200pF @ 1000V 3.215kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM02T6LIAG

MSCSM120AM02T6LIAG

MOSFET 2N-CH 1200V 947A

Microchip Technology

8,818 -
RFQ
MSCSM120AM02T6LIAG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 947A (Tc) 2.6mOhm @ 480A, 20V 2.8V @ 36mA 2784nC @ 20V 36200pF @ 1000V 3.75kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027CD3AG

MSCSM120AM027CD3AG

MOSFET 2N-CH 1200V 733A D3

Microchip Technology

1 -
RFQ
MSCSM120AM027CD3AG

데이터시트

- Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount D3
CAS380M17HM3

CAS380M17HM3

MOSFET 2N-CH 1700V 532A MODULE

Wolfspeed, Inc.

1 -
RFQ
CAS380M17HM3

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 532A (Tc) 3.74mOhm @ 380A, 15V 3.6V @ 152mA 1494nC @ 15V 4700pF @ 1200V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
SSM6N15AFE,LM

SSM6N15AFE,LM

MOSFET 2N-CH 30V 0.1A ES6

Toshiba Semiconductor and Storage

10 -
RFQ
SSM6N15AFE,LM

데이터시트

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 100mA 4Ohm @ 10mA, 4V 1.5V @ 100µA - 13.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
DMG6301UDW-13

DMG6301UDW-13

MOSFET 2N-CH 25V 0.24A SOT363

Diodes Incorporated

3,889 -
RFQ
DMG6301UDW-13

데이터시트

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 25V 240mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.36nC @ 4.5V 27.9pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
DMN62D0UV-7

DMN62D0UV-7

MOSFET 2N-CH 60V 0.49A SOT563

Diodes Incorporated

6,994 -
RFQ
DMN62D0UV-7

데이터시트

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 490mA (Ta) 2Ohm @ 100mA, 4.5V 1V @ 250µA 0.5nC @ 4.5V 32pF @ 30V 470mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
2N7002DWS-7

2N7002DWS-7

MOSFET 2N-CH 60V 0.247A SOT363

Diodes Incorporated

5,300 -
RFQ
2N7002DWS-7

데이터시트

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 247mA (Ta) 4Ohm @ 500mA, 10V 2.5V @ 250µA 0.4nC @ 4.5V 41pF @ 25V 290mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
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