FET, MOSFET 어레이

제조업체 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지

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사진 제조사 부품 번호 재고 상태 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지
ALD212908APAL

ALD212908APAL

MOSFET 2N-CH 10.6V 0.08A 8PDIP

Advanced Linear Devices Inc.

7,109 -
RFQ
ALD212908APAL

데이터시트

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD310704PCL

ALD310704PCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

3,728 -
RFQ
ALD310704PCL

데이터시트

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD310708PCL

ALD310708PCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

3,316 -
RFQ
ALD310708PCL

데이터시트

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD1101BPAL

ALD1101BPAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

3,396 -
RFQ
ALD1101BPAL

데이터시트

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1102BPAL

ALD1102BPAL

MOSFET 2P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

5,033 -
RFQ
ALD1102BPAL

데이터시트

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD110808ASCL

ALD110808ASCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

4,979 -
RFQ
ALD110808ASCL

데이터시트

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD114804APCL

ALD114804APCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

7,794 -
RFQ
ALD114804APCL

데이터시트

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
IRF7530TR

IRF7530TR

MOSFET 2N-CH 20V 5.4A MICRO8

Infineon Technologies

6,036 -
RFQ
IRF7530TR

데이터시트

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 5.4A 30mOhm @ 5.4A, 4.5V 1.2V @ 250µA 26nC @ 4.5V 1310pF @ 15V 1.3W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
SD5000N PDIP 16L ROHS

SD5000N PDIP 16L ROHS

MOSFET 4N-CH 20V 0.05A 16DIP

Linear Integrated Systems, Inc.

4,796 -
RFQ
SD5000N PDIP 16L ROHS

데이터시트

- 16-DIP (0.300", 7.62mm) Obsolete MOSFET (Metal Oxide) 4 N-Channel - 20V 50mA (Ta) 70Ohm @ 1mA, 5V 1.5V @ 1µA - - 500mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole 16-DIP
SMA5118

SMA5118

MOSFET 6N-CH 500V 5A 12SIP

Sanken Electric USA Inc.

8 -
RFQ
SMA5118

데이터시트

- 12-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 500V 5A 1.4Ohm @ 2.5A, 10V 4V @ 1mA - 770pF @ 10V 4W 150°C (TJ) - - Through Hole 12-SIP
SMA5112

SMA5112

MOSFET 6N-CH 250V 7A 12SIP

Sanken Electric USA Inc.

3,873 -
RFQ
SMA5112

데이터시트

- 12-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 250V 7A 500mOhm @ 3.5A, 10V 4V @ 1mA - 450pF @ 10V 4W 150°C (TJ) - - Through Hole 12-SIP
ALD110808APCL

ALD110808APCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

2,978 -
RFQ
ALD110808APCL

데이터시트

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
SLA5037

SLA5037

MOSFET 4N-CH 100V 10A 12SIP

Sanken Electric USA Inc.

9,271 -
RFQ
SLA5037

데이터시트

- 12-SIP Exposed Tab Tube Active MOSFET (Metal Oxide) 4 N-Channel Logic Level Gate 100V 10A 80mOhm @ 5A, 10V 2V @ 250mA - 1630pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
ALD310702APCL

ALD310702APCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

3,420 -
RFQ
ALD310702APCL

데이터시트

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD310704APCL

ALD310704APCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

3,289 -
RFQ
ALD310704APCL

데이터시트

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD310708APCL

ALD310708APCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

4,185 -
RFQ
ALD310708APCL

데이터시트

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
SLA5041

SLA5041

MOSFET 4N-CH 200V 10A 12SIP

Sanken Electric USA Inc.

9,059 -
RFQ
SLA5041

데이터시트

- 12-SIP Exposed Tab Tube Active MOSFET (Metal Oxide) 4 N-Channel Logic Level Gate 200V 10A 175mOhm @ 5A, 10V 4V @ 1mA - 850pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
EPC2100ENGRT

EPC2100ENGRT

MOSFET 2N-CH 30V 10A DIE

EPC

6,740 -
RFQ
EPC2100ENGRT

데이터시트

eGaN® Die Tape & Reel (TR) Obsolete GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 30V 10A (Ta), 40A (Ta) 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V 2.5V @ 4mA, 2.5V @ 16mA 4.9nC @ 15V, 19nC @ 15V 475pF @ 15V, 1960pF @ 15V - -40°C ~ 150°C (TJ) - - Surface Mount Die
ALD1101APAL

ALD1101APAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

4,524 -
RFQ
ALD1101APAL

데이터시트

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1102APAL

ALD1102APAL

MOSFET 2P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

8,400 -
RFQ
ALD1102APAL

데이터시트

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
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