24시간 이용 가능:
0755-82798135FET, MOSFET 어레이
| 사진 | 제조사 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 구성 | FET 기능 | 드레인-소스 전압(Vdss) | 전류 - 연속 드레인(Id) @ 25°C | Rds 켜짐(최대) @ Id, Vgs | Vgs(th) (최대) @ Id | 게이트 충전(Qg) (최대) @ Vgs | 입력 커패시턴스(Ciss) (최대) @ Vds | 전력 - 최대 | 작동 온도 | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD114804SCLMOSFET 4N-CH 10.6V 16SOIC |
5,086 | - |
|
데이터시트 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD114904PALMOSFET 2N-CH 10.6V 8PDIP |
2,925 | - |
|
데이터시트 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD210808SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
5,370 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
SP8J5TBMOSFET 2P-CH 30V 7A 8SOP |
8,074 | - |
|
데이터시트 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 7A | 28mOhm @ 7A, 10V | 2.5V @ 1mA | 25nC @ 5V | 2600pF @ 10V | 2W | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
SI7946DP-T1-E3MOSFET 2N-CH 150V 2.1A PPAK SO8 |
6,259 | - |
|
데이터시트 |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 150V | 2.1A | 150mOhm @ 3.3A, 10V | 4V @ 250µA | 20nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
|
SI7946DP-T1-GE3MOSFET 2N-CH 150V 2.1A PPAK SO8 |
5,073 | - |
|
데이터시트 |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 150V | 2.1A | 150mOhm @ 3.3A, 10V | 4V @ 250µA | 20nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
|
ALD114813SCLMOSFET 4N-CH 10.6V 16SOIC |
4,588 | - |
|
데이터시트 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD212900SALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
5,721 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 20mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD114913PALMOSFET 2N-CH 10.6V 8PDIP |
4,842 | - |
|
데이터시트 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
SLA5060MOSFET 3N/3P-CH 60V 6A 12SIP |
5,047 | - |
|
데이터시트 |
- | 12-SIP Exposed Tab | Bulk | Active | MOSFET (Metal Oxide) | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 6A | 220mOhm @ 3A, 4V | - | - | 320pF @ 10V, 790pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
|
ALD212902PALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
8,712 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD212904PALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
2,419 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD212908PALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
7,960 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD210802SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
6,543 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD210804SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
6,836 | - |
|
데이터시트 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD210814SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
4,551 | - |
|
- |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | - | - | Surface Mount | 16-SOIC |
|
ALD110908PALMOSFET 2N-CH 10.6V 8PDIP |
8,249 | - |
|
데이터시트 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD110914PALMOSFET 2N-CH 10.6V 8PDIP |
9,592 | - |
|
데이터시트 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD110802SCLMOSFET 4N-CH 10.6V 16SOIC |
5,212 | - |
|
데이터시트 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD110804SCLMOSFET 4N-CH 10.6V 16SOIC |
3,286 | - |
|
데이터시트 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |

