FET, MOSFET 어레이

제조업체 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지

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사진 제조사 부품 번호 재고 상태 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지
FF3MR12KM1HPHPSA1

FF3MR12KM1HPHPSA1

MOSFET 2N-CH 1200V 220A AG62MMHB

Infineon Technologies

13 -
RFQ
FF3MR12KM1HPHPSA1

데이터시트

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 220A 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
APTM100A13SCG

APTM100A13SCG

MOSFET 2N-CH 1000V 65A SP6

Microchip Technology

4 -
RFQ

-

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 65A 156mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
FF5MR20KM1HHPSA1

FF5MR20KM1HHPSA1

MOSFET

Infineon Technologies

9 -
RFQ
FF5MR20KM1HHPSA1

데이터시트

- - Tray Active - - - - - - - - - - - - - - -
FF4MR20KM1HPHPSA1

FF4MR20KM1HPHPSA1

MOSFET 2N-CH 2000V AG-62MMHB

Infineon Technologies

10 -
RFQ
FF4MR20KM1HPHPSA1

데이터시트

C, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 2000V (2kV) 280A (Tc) 5.3mOhm @ 300A, 18V 5.15V @ 168mA 1170nC @ 18V 36100pF @ 1.2kV - -40°C ~ 175°C - - Chassis Mount AG-62MMHB
BSM450D12P4G102

BSM450D12P4G102

MOSFET 2N-CH 1200V 447A MODULE

Rohm Semiconductor

4 -
RFQ
BSM450D12P4G102

데이터시트

- Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 447A (Tc) - 4.8V @ 218.4mA - 44000pF @ 10V 1.45kW (Tc) 175°C (TJ) - - Chassis Mount Module
HAS175M12BM3

HAS175M12BM3

MOSFET 2N-CH 1200V 175A

Wolfspeed, Inc.

3 -
RFQ
HAS175M12BM3

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 175A - - - - - - - - Chassis Mount -
FF1MR12KM1HHPSA1

FF1MR12KM1HHPSA1

MOSFET

Infineon Technologies

12 -
RFQ
FF1MR12KM1HHPSA1

데이터시트

- - Tray Active - - - - - - - - - - - - - - -
FF1MR12KM1HPHPSA1

FF1MR12KM1HPHPSA1

MOSFET

Infineon Technologies

16 -
RFQ
FF1MR12KM1HPHPSA1

데이터시트

- - Tray Active - - - - - - - - - - - - - - -
MSCSM170HRM11NG

MSCSM170HRM11NG

MOSFET 4N-CH 1700V/1200V 226A

Microchip Technology

4 -
RFQ
MSCSM170HRM11NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 226A (Tc), 163A (Tc) 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V 3.2V @ 10mA, 2.8V @ 6mA 712nC @ 20V, 464nC @ 20V 13200pF @ 1000V, 6040pF @ 1000V 1.012kW (Tc), 662W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042T6AG

MSCSM120AM042T6AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

4 -
RFQ
MSCSM120AM042T6AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM08NG

MSCSM120HRM08NG

MOSFET 4N-CH 1200V/700V 317A

Microchip Technology

8 -
RFQ
MSCSM120HRM08NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 317A (Tc), 227A (Tc) 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V 2.8V @ 12mA, 2.4V @ 8mA 928nC @ 20V, 430nC @ 20V 12100pF @ 1000V, 9000pF @ 700V 1.253kW (Tc), 613W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NVVR26A120M1WST

NVVR26A120M1WST

MOSFET 2N-CH 1200V AHPM15-CDA

onsemi

6 -
RFQ
NVVR26A120M1WST

데이터시트

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDA
ADP46075W3

ADP46075W3

MOSFET 6N-CH 750V 485A ACEPACK

STMicroelectronics

5 -
RFQ
ADP46075W3

데이터시트

- Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 750V 485A (Tj) 2.05mOhm @ 460A, 18V 4.4V @ 40mA 984nC @ 18V 27050pF @ 400V 704W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
MSCSM170HRM075NG

MSCSM170HRM075NG

MOSFET 4N-CH 1700V/1200V 337A

Microchip Technology

7 -
RFQ
MSCSM170HRM075NG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 337A (Tc), 317A (Tc) 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V 3.2V @ 15mA, 2.8V @ 12mA 1068nC @ 20V, 928nC @ 20V 19800pF @ 1000V, 12100pF @ 1000V 1.492kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
HAS350M12BM3

HAS350M12BM3

MOSFET 2N-CH 1200V 350A

Wolfspeed, Inc.

3 -
RFQ
HAS350M12BM3

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 350A - - - - - - - - Chassis Mount -
HAS530M12BM3

HAS530M12BM3

MOSFET 2N-CH 1200V 530A

Wolfspeed, Inc.

3 -
RFQ
HAS530M12BM3

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 530A - - - - - - - - Chassis Mount -
WAS310M17BM3

WAS310M17BM3

SIC 1700V 310A

Wolfspeed, Inc.

4 -
RFQ
WAS310M17BM3

데이터시트

- Module Box Active Silicon Carbide (SiC) - - 1700V (1.7kV) 310A - - - - - - - - Chassis Mount -
HAS310M17BM3

HAS310M17BM3

MOSFET 2N-CH 1700V 399A

Wolfspeed, Inc.

3 -
RFQ
HAS310M17BM3

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1700V 399A (Tc) 5.8mOhm @ 310A, 15V 3.6V @ 102mA 996nC @ 15V 31500pF @ 1000V 1.63kW (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount -
ADP280120W3

ADP280120W3

MOSFET 6N-CH 1200V 275A ACEPACK

STMicroelectronics

5 -
RFQ
ADP280120W3

데이터시트

ECOPACK® Module Tray Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 275A (Tj) 5.05mOhm @ 280A, 18V 4.4V @ 30mA 629nC @ 18V 18710pF @ 800V 549W -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
CAB320M17XM3

CAB320M17XM3

SIC 1700V 320A MODULE

Wolfspeed, Inc.

2 -
RFQ
CAB320M17XM3

데이터시트

- Module Box Active Silicon Carbide (SiC) - - 1700V (1.7kV) 320A (Tc) - - - - - - - - Chassis Mount -
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