FET, MOSFET 어레이

제조업체 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지

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결과
사진 제조사 부품 번호 재고 상태 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지
NXH007F120M3F2PTHG

NXH007F120M3F2PTHG

MOSFET 4N-CH 1200V 149A 34PIM

onsemi

6 -
RFQ
NXH007F120M3F2PTHG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 149A (Tc) 10mOhm @ 120A, 18V 4.4V @ 60mA 407nC @ 18V 9090pF @ 800V 353W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
MSCSM170HRM451AG

MSCSM170HRM451AG

MOSFET 4N-CH 1700V/1200V 64A

Microchip Technology

10 -
RFQ
MSCSM170HRM451AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 64A (Tc), 89A (Tc) 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V 3.2V @ 2.5mA, 2.8V @ 3mA 178nC @ 20V, 232nC @ 20V 3300pF @ 1000V, 3020pF @ 1000V 319W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH008T120M3F2PTHG

NXH008T120M3F2PTHG

MOSFET 4N-CH 1200V 129A 29PIM

onsemi

18 -
RFQ
NXH008T120M3F2PTHG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 129A (Tc) 11.5mOhm @ 100A, 18V 4.4V @ 60mA 454nC @ 20V 9129pF @ 800V 371W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 29-PIM (56.7x42.5)
MSCSM120HRM311AG

MSCSM120HRM311AG

MOSFET 4N-CH 1200V/700V 89A

Microchip Technology

10 -
RFQ
MSCSM120HRM311AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 89A (Tc), 124A (Tc) 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V 2.8V @ 3mA, 2.4V @ 4mA 232nC @ 20V, 215nC @ 20V 3020pF @ 1000V, 4500pF @ 700V 395W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF6MR12W2M1HPB11BPSA1

FF6MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V 200A MODULE

Infineon Technologies

18 -
RFQ
FF6MR12W2M1HPB11BPSA1

데이터시트

HEXFET® Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
FF6MR12W2M1HB11BPSA1

FF6MR12W2M1HB11BPSA1

MOSFET 2N-CH 1200V 145A MODULE

Infineon Technologies

18 -
RFQ
FF6MR12W2M1HB11BPSA1

데이터시트

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 145A (Tj) 5.4mOhm @ 150A, 18V 5.15V @ 60mA 446nC @ 18V 13200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
GCMX005A120B3B1P

GCMX005A120B3B1P

MOSFET 4N-CH 1200V 383A

SemiQ

2 -
RFQ
GCMX005A120B3B1P

데이터시트

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) - 1200V (1.2kV) 383A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 927nC @ 20V 23500pF @ 800V 1.154kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH004P120M3F2PNG

NXH004P120M3F2PNG

MOSFET 2N-CH 1200V 338A 36PIM

onsemi

20 -
RFQ
NXH004P120M3F2PNG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 338A (Tc) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.098W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
GCMX005A120S7B1

GCMX005A120S7B1

MOSFET 2N-CH 1200V 348A

SemiQ

20 -
RFQ
GCMX005A120S7B1

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 348A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 978nC @ 20V 29300pF @ 800V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FS13MR12W2M1HPB11BPSA1

FS13MR12W2M1HPB11BPSA1

MOSFET

Infineon Technologies

18 -
RFQ
FS13MR12W2M1HPB11BPSA1

데이터시트

- - Tray Active - - - - - - - - - - - - - - -
CHB011M12GM4

CHB011M12GM4

SIC, MODULE, 11M, 1200V, 48 MM,

Wolfspeed, Inc.

18 -
RFQ
CHB011M12GM4

데이터시트

* - Box Active - - - - - - - - - - - - - - -
CBB011M12GM4

CBB011M12GM4

SIC, MODULE, 11M, 1200V, 48 MM,

Wolfspeed, Inc.

16 -
RFQ
CBB011M12GM4

데이터시트

* - Box Active - - - - - - - - - - - - - - -
CBB011M12GM4T

CBB011M12GM4T

SIC, MODULE, 11M, 1200V, 48 MM,

Wolfspeed, Inc.

8 -
RFQ
CBB011M12GM4T

데이터시트

* - Box Active - - - - - - - - - - - - - - -
CHB011M12GM4T

CHB011M12GM4T

SIC, MODULE, 11M, 1200V, 48 MM,

Wolfspeed, Inc.

3 -
RFQ
CHB011M12GM4T

데이터시트

* - Box Active - - - - - - - - - - - - - - -
CAB011A12GM3T

CAB011A12GM3T

MOSFET 2N-CH 1200V 141A MODULE

Wolfspeed, Inc.

5 -
RFQ
CAB011A12GM3T

데이터시트

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 141A (Tj) 13.9mOhm @ 150A, 15V 3.9V @ 34mA 354nC @ 15V 11000pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
FF4MR12W2M1HPB11BPSA1

FF4MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V AG-EASY2B

Infineon Technologies

17 -
RFQ
FF4MR12W2M1HPB11BPSA1

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
F411MR12W2M1HPB76BPSA1

F411MR12W2M1HPB76BPSA1

MOSFET

Infineon Technologies

9 -
RFQ
F411MR12W2M1HPB76BPSA1

데이터시트

- - Tray Active - - - - - - - - - - - - - - -
FF6MR12KM1HPHPSA1

FF6MR12KM1HPHPSA1

MOSFET

Infineon Technologies

10 -
RFQ
FF6MR12KM1HPHPSA1

데이터시트

- - Tray Active - - - - - - - - - - - - - - -
CAB004M12GM4

CAB004M12GM4

SIC, MODULE, 4M, 1200V, 48 MM, G

Wolfspeed, Inc.

18 -
RFQ
CAB004M12GM4

데이터시트

* - Box Active - - - - - - - - - - - - - - -
CAB004M12GM4T

CAB004M12GM4T

SIC, MODULE, 4M, 1200V, 48 MM, G

Wolfspeed, Inc.

18 -
RFQ
CAB004M12GM4T

데이터시트

* - Box Active - - - - - - - - - - - - - - -
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