FET, MOSFET 어레이

제조업체 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지

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사진 제조사 부품 번호 재고 상태 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지
NXV08A170DB2

NXV08A170DB2

MOSFET 2N-CH 80V 200A APM12-CBA

onsemi

238 -
RFQ
NXV08A170DB2

데이터시트

- 12-PowerDIP Module (1.118", 28.40mm) Tray Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 80V 200A (Tj) 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V 4V @ 250µA 195nC @ 10V 14000pF @ 40V - 175°C (TJ) Automotive AEC-Q100 Through Hole APM12-CBA
NVXK2TR40WXT

NVXK2TR40WXT

MOSFET 4N-CH 1200V 27A APM32

onsemi

60 -
RFQ
NVXK2TR40WXT

데이터시트

- 32-PowerDIP Module (1.311", 33.30mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 27A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
F435MR07W1D7S8B11ABPSA1

F435MR07W1D7S8B11ABPSA1

MOSFET 4N-CH 650V 35A MODULE

Infineon Technologies

42 -
RFQ
F435MR07W1D7S8B11ABPSA1

데이터시트

EasyPACK™ 1B Module Tray Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 650V 35A 39.4mOhm @ 35A, 10V 4.45V @ 1.74mA 141nC @ 10V 6950pF @ 400V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
NXH030F120M3F1PTG

NXH030F120M3F1PTG

MOSFET 4N-CH 1200V 38A 22PIM

onsemi

26 -
RFQ
NXH030F120M3F1PTG

데이터시트

- Module Tray Active SiCFET (Silicon Carbide) 4 N-Channel (Full Bridge) Depletion Mode 1200V (1.2kV) 38A (Tc) 38.5mOhm @ 30A, 18V 4.4V @ 15mA 110nC @ 18V 2246pF @ 800V 100W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
NXH010P120M3F1PG

NXH010P120M3F1PG

MOSFET 2N-CH 1200V 105A

onsemi

28 -
RFQ
NXH010P120M3F1PG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 14.5mOhm @ 90A, 18V 4.4V @ 45mA 314nC @ 18V 6451pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P120M3F1PTG

NXH010P120M3F1PTG

MOSFET 2N-CH 1200V 105A

onsemi

27 -
RFQ
NXH010P120M3F1PTG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 14.5mOhm @ 90A, 18V 4.4V @ 45mA 314nC @ 18V 6451pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF33MR12W1M1HPB11BPSA1

FF33MR12W1M1HPB11BPSA1

MOSFET

Infineon Technologies

30 -
RFQ
FF33MR12W1M1HPB11BPSA1

데이터시트

- - Tray Active - - - - - - - - - - - - - - -
DF11MR12W1M1HFB67BPSA1

DF11MR12W1M1HFB67BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

38 -
RFQ
DF11MR12W1M1HFB67BPSA1

데이터시트

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
NXH030P120M3F1PTG

NXH030P120M3F1PTG

MOSFET 2N-CH 1200V 42A

onsemi

28 -
RFQ
NXH030P120M3F1PTG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 42A (Tc) 38.5mOhm @ 30A, 18V 4.4V @ 15mA 110nC @ 18V 2271pF @ 800V 100W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH040P120MNF1PG

NXH040P120MNF1PG

MOSFET 2N-CH 1200V 30A

onsemi

28 -
RFQ
NXH040P120MNF1PG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH008P120M3F1PTG

NXH008P120M3F1PTG

MOSFET 2N-CH 1200V 145A

onsemi

27 -
RFQ
NXH008P120M3F1PTG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX010A120B2B1P

GCMX010A120B2B1P

MOSFET 2N-CH 1200V 214A

SemiQ

28 -
RFQ
GCMX010A120B2B1P

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 214A (Tc) 12mOhm @ 100A, 20V 4V @ 40mA 476nC @ 20V 13100pF @ 800V 750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P120MNF1PTNG

NXH010P120MNF1PTNG

MOSFET 2N-CH 1200V 114A

onsemi

28 -
RFQ
NXH010P120MNF1PTNG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
CAB016M12FM3T

CAB016M12FM3T

MOSFET 2N-CH 1200V 78A MODULE

Wolfspeed, Inc.

30 -
RFQ
CAB016M12FM3T

데이터시트

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 78A (Tj) 21.3mOhm @ 80A, 15V 3.6V @ 23mA 236nC @ 15V 6600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
NXH020F120MNF1PG

NXH020F120MNF1PG

MOSFET 4N-CH 1200V 51A 22PIM

onsemi

28 -
RFQ
NXH020F120MNF1PG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
CAB011M12FM3T

CAB011M12FM3T

MOSFET 2N-CH 1200V 105A MODULE

Wolfspeed, Inc.

38 -
RFQ
CAB011M12FM3T

데이터시트

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 105A (Tj) 14mOhm @ 100A, 15V 3.6V @ 35mA 324nC @ 15V 10300pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
CCB032M12FM3T

CCB032M12FM3T

MOSFET 6N-CH 1200V 40A MODULE

Wolfspeed, Inc.

33 -
RFQ
CCB032M12FM3T

데이터시트

- Module Box Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 40A (Tj) 42.6mOhm @ 30A, 15V 3.6V @ 11.5mA 118nC @ 15V 3400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
NXH004P120M3F2PTNG

NXH004P120M3F2PTNG

MOSFET 2N-CH 1200V 338A 36PIM

onsemi

40 -
RFQ
NXH004P120M3F2PTNG

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 338A (Tj) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.1kW (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
CCB021M12FM3T

CCB021M12FM3T

MOSFET 6N-CH 1200V 51A MODULE

Wolfspeed, Inc.

56 -
RFQ
CCB021M12FM3T

데이터시트

- Module Box Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 51A (Tj) 27.9mOhm @ 30A, 15V 3.6V @ 17.7mA 162nC @ 15V 4900pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
CAB008M12GM3T

CAB008M12GM3T

MOSFET 2N-CH 1200V 146A MODULE

Wolfspeed, Inc.

54 -
RFQ
CAB008M12GM3T

데이터시트

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 146A (Tj) 10.4mOhm @ 150A, 15V 3.6V @ 46mA 472nC @ 15V 13600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
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