24시간 이용 가능:
0755-82798135FET, MOSFET 어레이
| 사진 | 제조사 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 구성 | FET 기능 | 드레인-소스 전압(Vdss) | 전류 - 연속 드레인(Id) @ 25°C | Rds 켜짐(최대) @ Id, Vgs | Vgs(th) (최대) @ Id | 게이트 충전(Qg) (최대) @ Vgs | 입력 커패시턴스(Ciss) (최대) @ Vds | 전력 - 최대 | 작동 온도 | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXV08A170DB2MOSFET 2N-CH 80V 200A APM12-CBA |
238 | - |
|
데이터시트 |
- | 12-PowerDIP Module (1.118", 28.40mm) | Tray | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 80V | 200A (Tj) | 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V | 4V @ 250µA | 195nC @ 10V | 14000pF @ 40V | - | 175°C (TJ) | Automotive | AEC-Q100 | Through Hole | APM12-CBA |
|
NVXK2TR40WXTMOSFET 4N-CH 1200V 27A APM32 |
60 | - |
|
데이터시트 |
- | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 27A (Tc) | 59mOhm @ 35A, 20V | 4.3V @ 10mA | 106nC @ 20V | 1789pF @ 800V | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
F435MR07W1D7S8B11ABPSA1MOSFET 4N-CH 650V 35A MODULE |
42 | - |
|
데이터시트 |
EasyPACK™ 1B | Module | Tray | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 650V | 35A | 39.4mOhm @ 35A, 10V | 4.45V @ 1.74mA | 141nC @ 10V | 6950pF @ 400V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
NXH030F120M3F1PTGMOSFET 4N-CH 1200V 38A 22PIM |
26 | - |
|
데이터시트 |
- | Module | Tray | Active | SiCFET (Silicon Carbide) | 4 N-Channel (Full Bridge) | Depletion Mode | 1200V (1.2kV) | 38A (Tc) | 38.5mOhm @ 30A, 18V | 4.4V @ 15mA | 110nC @ 18V | 2246pF @ 800V | 100W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 22-PIM (33.8x42.5) |
|
NXH010P120M3F1PGMOSFET 2N-CH 1200V 105A |
28 | - |
|
데이터시트 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 105A (Tc) | 14.5mOhm @ 90A, 18V | 4.4V @ 45mA | 314nC @ 18V | 6451pF @ 800V | 272W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
NXH010P120M3F1PTGMOSFET 2N-CH 1200V 105A |
27 | - |
|
데이터시트 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 105A (Tc) | 14.5mOhm @ 90A, 18V | 4.4V @ 45mA | 314nC @ 18V | 6451pF @ 800V | 272W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
FF33MR12W1M1HPB11BPSA1MOSFET |
30 | - |
|
데이터시트 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
DF11MR12W1M1HFB67BPSA1MOSFET 1200V AG-EASY1B |
38 | - |
|
데이터시트 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
|
NXH030P120M3F1PTGMOSFET 2N-CH 1200V 42A |
28 | - |
|
데이터시트 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 42A (Tc) | 38.5mOhm @ 30A, 18V | 4.4V @ 15mA | 110nC @ 18V | 2271pF @ 800V | 100W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
NXH040P120MNF1PGMOSFET 2N-CH 1200V 30A |
28 | - |
|
데이터시트 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
|
NXH008P120M3F1PTGMOSFET 2N-CH 1200V 145A |
27 | - |
|
데이터시트 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 145A (Tc) | 10.9mOhm @ 120A, 18V | 4.4V @ 60mA | 419nC @ 18V | 8334pF @ 800V | 382W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
GCMX010A120B2B1PMOSFET 2N-CH 1200V 214A |
28 | - |
|
데이터시트 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 214A (Tc) | 12mOhm @ 100A, 20V | 4V @ 40mA | 476nC @ 20V | 13100pF @ 800V | 750W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
NXH010P120MNF1PTNGMOSFET 2N-CH 1200V 114A |
28 | - |
|
데이터시트 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
CAB016M12FM3TMOSFET 2N-CH 1200V 78A MODULE |
30 | - |
|
데이터시트 |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 78A (Tj) | 21.3mOhm @ 80A, 15V | 3.6V @ 23mA | 236nC @ 15V | 6600pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
NXH020F120MNF1PGMOSFET 4N-CH 1200V 51A 22PIM |
28 | - |
|
데이터시트 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 22-PIM (33.8x42.5) |
|
CAB011M12FM3TMOSFET 2N-CH 1200V 105A MODULE |
38 | - |
|
데이터시트 |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 105A (Tj) | 14mOhm @ 100A, 15V | 3.6V @ 35mA | 324nC @ 15V | 10300pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
CCB032M12FM3TMOSFET 6N-CH 1200V 40A MODULE |
33 | - |
|
데이터시트 |
- | Module | Box | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 40A (Tj) | 42.6mOhm @ 30A, 15V | 3.6V @ 11.5mA | 118nC @ 15V | 3400pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
NXH004P120M3F2PTNGMOSFET 2N-CH 1200V 338A 36PIM |
40 | - |
|
데이터시트 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 338A (Tj) | 5.5mOhm @ 200A, 18V | 4.4V @ 120mA | 876nC @ 20V | 16410pF @ 800V | 1.1kW (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 36-PIM (56.7x62.8) |
|
CCB021M12FM3TMOSFET 6N-CH 1200V 51A MODULE |
56 | - |
|
데이터시트 |
- | Module | Box | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 51A (Tj) | 27.9mOhm @ 30A, 15V | 3.6V @ 17.7mA | 162nC @ 15V | 4900pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
CAB008M12GM3TMOSFET 2N-CH 1200V 146A MODULE |
54 | - |
|
데이터시트 |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 146A (Tj) | 10.4mOhm @ 150A, 15V | 3.6V @ 46mA | 472nC @ 15V | 13600pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
