FET, MOSFET 어레이

제조업체 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지

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사진 제조사 부품 번호 재고 상태 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 구성 FET 기능 드레인-소스 전압(Vdss) 전류 - 연속 드레인(Id) @ 25°C Rds 켜짐(최대) @ Id, Vgs Vgs(th) (최대) @ Id 게이트 충전(Qg) (최대) @ Vgs 입력 커패시턴스(Ciss) (최대) @ Vds 전력 - 최대 작동 온도 등급 자격 장착 유형 공급자 장치 패키지
ALD1103PBL

ALD1103PBL

MOSFET 2N/2P-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

37 -
RFQ
ALD1103PBL

데이터시트

- 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V 40mA, 16mA 75Ohm @ 5V 1V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
NVXK2VR40WXT2

NVXK2VR40WXT2

MOSFET 6N-CH 1200V 55A APM32

onsemi

14 -
RFQ
NVXK2VR40WXT2

데이터시트

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
FF17MR12W1M1HB11BPSA1

FF17MR12W1M1HB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

13 -
RFQ
FF17MR12W1M1HB11BPSA1

데이터시트

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FS33MR12W1M1HB11BPSA1

FS33MR12W1M1HB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

3 -
RFQ
FS33MR12W1M1HB11BPSA1

데이터시트

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF8MR12W1M1HS4PB11BPSA1

FF8MR12W1M1HS4PB11BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

4 -
RFQ
FF8MR12W1M1HS4PB11BPSA1

데이터시트

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 100A (Tj) 8.1mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B
F3L8MR12W2M1HPB11BPSA1

F3L8MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V 85A AG-EASY2B

Infineon Technologies

24 -
RFQ
F3L8MR12W2M1HPB11BPSA1

데이터시트

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 85A (Tj) 12mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
CBB032M12FM3T

CBB032M12FM3T

MOSFET 4N-CH 1200V 39A

Wolfspeed, Inc.

22 -
RFQ
CBB032M12FM3T

데이터시트

- Module Box Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 39A (Tj) 44mOhm @ 30A, 15V 3.9V @ 11mA 118nC @ 15V 3500pF @ 1000V - -40°C ~ 150°C (TJ) - - Chassis Mount -
FS13MR12W2M1HB70BPSA1

FS13MR12W2M1HB70BPSA1

MOSFET 6N-CH 1200V 62.5A

Infineon Technologies

15 -
RFQ
FS13MR12W2M1HB70BPSA1

데이터시트

CoolSiC™ - Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 62.5A (Tc) 11.7mOhm @ 62.5A, 18V 5.15V @ 28mA 200nC @ 18V 6050pF @ 800V - - - - - -
FF6MR12KM1HHPSA1

FF6MR12KM1HHPSA1

MOSFET

Infineon Technologies

10 -
RFQ
FF6MR12KM1HHPSA1

데이터시트

- - Tray Active - - - - - - - - - - - - - - -
CAB006A12GM3

CAB006A12GM3

MOSFET 2N-CH 1200V 200A

Wolfspeed, Inc.

10 -
RFQ
CAB006A12GM3

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 200A (Tj) 6.9mOhm @ 200A, 15V 3.6V @ 69mA 708nC @ 15V 20400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
MSCSM170HM23CT3AG

MSCSM170HM23CT3AG

MOSFET 4N-CH 1700V 124A

Microchip Technology

2 -
RFQ
MSCSM170HM23CT3AG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
BSM300D12P2E001

BSM300D12P2E001

MOSFET 2N-CH 1200V 300A MODULE

Rohm Semiconductor

11 -
RFQ
BSM300D12P2E001

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 300A (Tc) - 4V @ 68mA - 35000pF @ 10V 1875W -40°C ~ 150°C (TJ) - - Chassis Mount Module
NVVR26A120M1WSB

NVVR26A120M1WSB

MOSFET 2N-CH 1200V AHPM15-CDE

onsemi

10 -
RFQ
NVVR26A120M1WSB

데이터시트

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDE
NVVR26A120M1WSS

NVVR26A120M1WSS

MOSFET 2N-CH 1200V AHPM15-CDI

onsemi

9 -
RFQ
NVVR26A120M1WSS

데이터시트

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDI
CAB530M12BM3

CAB530M12BM3

MOSFET 2N-CH 1200V 530A MODULE

Wolfspeed, Inc.

4 -
RFQ
CAB530M12BM3

데이터시트

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 530A 3.55mOhm @ 530A, 15V 3.6V @ 140mA 1362nC @ 4V 39600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
WAB400M12BM3

WAB400M12BM3

MOSFET 2N-CH 1200V 468A MODULE

Wolfspeed, Inc.

21 -
RFQ
WAB400M12BM3

데이터시트

- Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 468A (Tc) 4.25mOhm @ 400A, 15V 3.6V @ 106mA 1040nC @ 15V 29700pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
CAS310M17BM3

CAS310M17BM3

SIC 1700V 310A

Wolfspeed, Inc.

5 -
RFQ
CAS310M17BM3

데이터시트

- Module Box Active Silicon Carbide (SiC) - - 1700V (1.7kV) 310A - - - - - - - - Chassis Mount -
MSCSM170AM029CT6LIAG

MSCSM170AM029CT6LIAG

MOSFET 2N-CH 1700V 676A

Microchip Technology

8 -
RFQ
MSCSM170AM029CT6LIAG

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 676A (Tc) 3.75mOhm @ 360A, 20V 3.3V @ 30mA 2136nC @ 20V 39600pF @ 1000V 3kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
CAB500M17HM3

CAB500M17HM3

MOSFET 2N-CH 1700V 653A MODULE

Wolfspeed, Inc.

6,839 -
RFQ
CAB500M17HM3

데이터시트

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 653A (Tc) 2.6mOhm @ 500A, 15V 3.6V @ 203mA 1992nC @ 15V 64900pF @ 1200V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
PMDXB1200UPEZ

PMDXB1200UPEZ

MOSFET 2P-CH 30V 0.41A 6DFN

Nexperia USA Inc.

797 -
RFQ
PMDXB1200UPEZ

데이터시트

- 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 410mA 1.4Ohm @ 410mA, 4.5V 950mV @ 250µA 1.2nC @ 4.5V 43.2pF @ 15V 285mW -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
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